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KMM5361203C2WG Scheda tecnica(PDF) 4 Page - Samsung semiconductor

Il numero della parte KMM5361203C2WG
Spiegazioni elettronici  1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
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Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM5361203C2WG Scheda tecnica(HTML) 4 Page - Samsung semiconductor

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DRAM MODULE
KMM5361203C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 4 -
FUNCTIONAL BLOCK DIAGRAM
RAS0
W
A0-A9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
RAS
LCAS
UCAS
OE
W
A0-A9
CAS0
CAS1
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
RAS
LCAS
UCAS
OE
W
A0-A9
CAS2
CAS3
Vcc
Vss
.1 or .22uF Capacitor
for each DRAM
To all DRAMs
U0
U1
DQ8
DQ17
DQ26
DQ35
DQ0
DQ1
DQ2
DQ3
RAS
CAS0
CAS1
CAS2
CAS3
OE
W
A0-A9
U2


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