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STGD7NC60H Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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STGD7NC60H Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 12 page STGP7NC60H - STGD7NC60H 2/12 Table 3: Absolute Maximum ratings ( ) Pulse width limited by max. junction temperature. Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Main Parameters (#) Calculated according to the iterative formula: Symbol Parameter Value Unit TO-220 DPAK VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C (#) 25 A IC Collector Current (continuous) at TC = 100°C (#) 14 A ICM ( ) Collector Current (pulsed) 50 A PTOT Total Dissipation at TC = 25°C 80 70 W Derating Factor 0.64 0.56 W/°C Tstg Storage Temperature – 55 to 150 °C Tj Operating Junction Temperature Min. Typ. Max. Rthj-case Thermal Resistance Junction-case TO-220 1.56 °C/W DPAK 1.78 Rthj-amb Thermal Resistance Junction-ambient TO-220 62.5 °C/W DPAK 100 TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) TO-220 300 °C DPAK 275 Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC = 1 mA, VGE = 0 600 V ICES Collector cut-off Current (VGE = 0) VCE = Max Rating, TC= 25 °C VCE = Max Rating, TC= 125 °C 10 1 µA mA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ±100 nA VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA 3.75 5.75 V VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 7 A VGE = 15V, IC = 7 A, Tc= 125°C 1.85 1.7 2.5 V V I C T C () T JMAX T C – R THJ C – V CE SAT M AX () TC IC , () × -------------------------------------------------------------------------------------------------- = |
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