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STGD7NC60H Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STGD7NC60H
Spiegazioni elettronici  N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD7NC60H Scheda tecnica(HTML) 2 Page - STMicroelectronics

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Table 3: Absolute Maximum ratings
( ) Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters
(#) Calculated according to the iterative formula:
Symbol
Parameter
Value
Unit
TO-220
DPAK
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC = 25°C (#)
25
A
IC
Collector Current (continuous) at TC = 100°C (#)
14
A
ICM ( )
Collector Current (pulsed)
50
A
PTOT
Total Dissipation at TC = 25°C
80
70
W
Derating Factor
0.64
0.56
W/°C
Tstg
Storage Temperature
– 55 to 150
°C
Tj
Operating Junction Temperature
Min.
Typ.
Max.
Rthj-case
Thermal Resistance Junction-case
TO-220
1.56
°C/W
DPAK
1.78
Rthj-amb
Thermal Resistance Junction-ambient
TO-220
62.5
°C/W
DPAK
100
TL
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
TO-220
300
°C
DPAK
275
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter
Breakdown Voltage
IC = 1 mA, VGE = 0
600
V
ICES
Collector cut-off Current
(VGE = 0)
VCE = Max Rating, TC= 25 °C
VCE = Max Rating, TC= 125 °C
10
1
µA
mA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
nA
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250 µA
3.75
5.75
V
VCE(sat)
Collector-Emitter
Saturation Voltage
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tc= 125°C
1.85
1.7
2.5
V
V
I
C
T
C
()
T
JMAX
T
C
R
THJ
C
V
CE SAT M AX
() TC IC
,
()
×
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