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LM323T Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte LM323T
Spiegazioni elettronici  3-AMPERE, 5 VOLT POSITIVE VOLTAGE REGULATORS
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

LM323T Scheda tecnica(HTML) 2 Page - ON Semiconductor

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LM323, A
2
MOTOROLA ANALOG IC DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Vin
20
Vdc
Power Dissipation
PD
Internally Limited
W
Operating Junction Temperature Range
TJ
0 to +125
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Lead Temperature (Soldering, 10 s)
Tsolder
300
°C
ELECTRICAL CHARACTERISTICS (TJ = Tlow to Thigh [Note 1], unless otherwise noted.)
LM323A
LM323
Characteristics
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Output Voltage
(Vin = 7.5 V, 0 ≤ Iout ≤ 3.0 A, TJ = 25°C)
VO
4.9
5.0
5.1
4.8
5.0
5.2
V
Output Voltage
(7.5 V
≤ Vin ≤ 15 V, 0 ≤ Iout ≤ 3.0 A,
P
≤ Pmax) (Note 2)
VO
4.8
5.0
5.2
4.75
5.0
5.25
V
Line Regulation
(7.5 V
≤ Vin ≤ 15 V, TJ = 25°C) (Note 3)
Regline
1.0
15
1.0
25
mV
Load Regulation
(Vin = 7.5 V, 0 ≤ Iout ≤ 3.0 A, TJ = 25°C)
(Note 3)
Regload
10
50
10
100
mV
Thermal Regulation
(Pulse = 10 ms, P = 20 W, TA = 25°C)
Regtherm
0.001
0.01
0.002
0.03
%VO/W
Quiescent Current
(7.5 V
≤ Vin ≤ 15 V, 0 ≤ Iout ≤ 3.0 A)
IB
3.5
10
3.5
20
mA
Output Noise Voltage
(10 Hz
≤ f ≤ 100 kHz, TJ = 25°C)
VN
40
40
µVrms
Ripple Rejection
(8.0 V
≤ Vin ≤ 18 V, Iout = 2.0A,
f = 120 Hz, TJ = 25°C)
RR
66
75
62
75
dB
Short Circuit Current Limit
(Vin = 15 V, TJ = 25°C)
(Vin = 7.5 V, TJ = 25°C)
ISC
4.5
5.5
4.5
5.5
A
Long Term Stability
S
35
35
mV
Thermal Resistance, Junction–to–Case (Note 4)
R
ΘJC
2.0
2.0
°C/W
NOTES: 1. Tlow to Thigh = 0° to +125°C
2. Although power dissipation is internally limited, specifications apply only for P
≤ Pmax = 25 W.
3. Load and line regulation are specified at constant junction temperature. Pulse testing is required with a pulse width
≤ 1.0 ms and a duty cycle ≤ 5%.
4. Without a heatsink, the thermal resistance (R
θJA is 65°C/W). With a heatsink, the effective thermal resistance can approach the specified values of
2.0
°C/W, depending on the efficiency of the heatsink.


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