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STP25NM50N Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STP25NM50N
Spiegazioni elettronici  N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
Parameter
Value
Unit
TO-220/D²PAK/I²PAK/
TO-247
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
±25
V
ID
Drain Current (continuous) at TC = 25°C
22
22(*)
A
ID
Drain Current (continuous) at TC = 100°C
14
14 (*)
A
IDM ( )
Drain Current (pulsed)
88
88 (*)
A
PTOT
Total Dissipation at TC = 25°C
160
40
W
Derating Factor
1.28
0.32
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
15
V/ns
Tstg
Storage Temperature
–55 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-220/D²PAK/I²PAK/
TO-247
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
0.78
3.1
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
350
mJ


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