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BDX33C Scheda tecnica(PDF) 3 Page - ON Semiconductor

Il numero della parte BDX33C
Spiegazioni elettronici  DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BDX33C Scheda tecnica(HTML) 3 Page - ON Semiconductor

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BDX33B BDX33C BDX34B BDX34C
3
Motorola Bipolar Power Transistor Device Data
Figure 1. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θJC(t) = r(t) RθJC
R
θJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03
0.3
3.0
30
300
20
1.0
10
5.0
2.0
1.0
0.5
0.02
3.0
5.0
7.0
10
20
30
50
100
70
0.2
dc
5.0 ms
1.0 ms
BDX33B
BDX33C
500
µs
100
µs
TC = 25°C
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
20
1.0
Figure 2. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.5
0.02
3.0
5.0
7.0
10
20
30
50
100
70
0.2
dc
5.0 ms
1.0 ms
BDX34B
BDX34C
500
µs
100
µs
TC = 25°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Fig. 3 is based on
TJ(pk) = 150_C; TC is variable depending on conditions. Se-
cond breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150_C. TJ(pk) may be calculated from the
data in Fig. . At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
10,000
1.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50
100
200
1000
500
300
100
5000
20
3000
200
500
2000
1000
30
50
300
0.1
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
5.0
20
100
10
200
100
70
50
TJ = 25°C
Cib
Cob
50
0.2
0.5
TJ = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
PNP
NPN


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