BCW30LT1 datasheet(1/8 Pages) ONSEMI

Il numero della parte	BCW30LT1

Spiegazioni elettronici	General Purpose Transistors(PNP Silicon)

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Produttore elettronici	ONSEMI [ON Semiconductor]

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November, 1999 – Rev. 0

1

Publication Order Number:

BCW30LT1/D

BCW30LT1

General Purpose

Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

–32

Vdc

Collector-Base Voltage

VCBO

–32

Vdc

Emitter-Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Total Device Dissipation

FR-5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

R

θJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

R

θJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to

+150

°C

(1) FR– 5 = 1.0

0.75 0.062 in.

(2) Alumina = 0.4

0.3 0.024 in. 99.5% alumina.

Device

Package

Shipping

ORDERING INFORMATION

BCW30LT1

SOT–23

http://onsemi.com

SOT–23 (TO–236AB)

CASE 318

STYLE 6

3000 Units/Rail

DEVICE MARKING

C2x

x = Monthly Date Code

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

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