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BCW30LT1 Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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BCW30LT1 Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 1999 November, 1999 – Rev. 0 1 Publication Order Number: BCW30LT1/D BCW30LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –32 Vdc Collector-Base Voltage VCBO –32 Vdc Emitter-Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C (1) FR– 5 = 1.0 0.75 0.062 in. (2) Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device Package Shipping ORDERING INFORMATION BCW30LT1 SOT–23 http://onsemi.com SOT–23 (TO–236AB) CASE 318 STYLE 6 3000 Units/Rail DEVICE MARKING C2x x = Monthly Date Code 1 2 3 COLLECTOR 3 1 BASE 2 EMITTER |
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