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BC848BPDW1T1 Scheda tecnica(PDF) 4 Page - ON Semiconductor |
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BC848BPDW1T1 Scheda tecnica(HTML) 4 Page - ON Semiconductor |
4 / 10 page BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series http://onsemi.com 4 TYPICAL NPN CHARACTERISTICS − BC846 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (mA) Figure 2. “On” Voltage IC, COLLECTOR CURRENT (mA) 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 0.2 1.0 10 200 TA = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V VCE = 5 V TA = 25°C 0 0.5 2.0 5.0 20 50 100 Figure 3. Collector Saturation Region IB, BASE CURRENT (mA) Figure 4. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) −1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 0.2 2.0 10 200 1.0 TA = 25°C 200 mA 50 mA IC = 10 mA 0.05 0.2 0.5 2.0 5.0 100 mA 20 mA −1.4 −1.8 −2.2 −2.6 −3.0 0.5 5.0 20 50 100 −55°C to 125°C qVB for VBE Figure 5. Capacitance VR, REVERSE VOLTAGE (VOLTS) 40 Figure 6. Current−Gain − Bandwidth Product IC, COLLECTOR CURRENT (mA) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 VCE = 5 V TA = 25°C 0.5 5.0 20 TA = 25°C Cob Cib |
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