1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 which is

designed for low power surface mount applications.

MAXIMUM RATINGS

Rating

Symbol

BC846

BC847

BC848

Unit

Collector – Emitter Voltage

VCEO

65

45

30

V

Collector – Base Voltage

VCBO

80

50

30

V

Emitter – Base Voltage

VEBO

6.0

6.0

5.0

V

Collector Current — Continuous

IC

100

100

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

TA = 25°C

PD

150

mW

Thermal Resistance, Junction to Ambient

RqJA

833

°C/W

Total Device Dissipation

PD

2.4

mW/

°C

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;

BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

BC846 Series

(IC = 10 mA)

BC847 Series

BC848 Series

V(BR)CEO

65

45

30

—

—

—

—

—

—

V

Collector – Emitter Breakdown Voltage

BC846 Series

(IC = 10 µA, VEB = 0)

BC847 Series

BC848 Series

V(BR)CES

80

50

30

—

—

—

—

—

—

V

Collector – Base Breakdown Voltage

BC846 Series

(IC = 10 mA)

BC847 Series

BC848 Series

V(BR)CBO

80

50

30

—

—

—

—

—

—

V

Emitter – Base Breakdown Voltage

BC846 Series

(IE = 1.0 mA)

BC847 Series

BC848 Series

V(BR)EBO

6.0

6.0

5.0

—

—

—

—

—

—

V

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO

—

—

—

—

15

5.0

nA

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in

Thermal Clad is a trademark of the Bergquist Company.

Order this document

by BC846AWT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC846AWT1,BWT1

BC847AWT1,BWT1,

CWT1

BC848AWT1,BWT1,

CWT1

CASE 419–02, STYLE 3

SOT–323/SC–70

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER