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BC558B Scheda tecnica(PDF) 4 Page - ON Semiconductor |
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BC558B Scheda tecnica(HTML) 4 Page - ON Semiconductor |
4 / 6 page BC556,B BC557A,B,C BC558B 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC556 Figure 7. DC Current Gain IC, COLLECTOR CURRENT (AMP) Figure 8. “On” Voltage IC, COLLECTOR CURRENT (mA) –0.8 –1.0 –0.6 –0.2 –0.4 1.0 2.0 –0.1 –1.0 –10 –200 –0.2 0.2 0.5 –0.2 –1.0 –10 –200 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = –5.0 V Figure 9. Collector Saturation Region IB, BASE CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) –1.0 –1.2 –1.6 –2.0 –0.02 –1.0 –10 0 –20 –0.1 –0.4 –0.8 –0.2 –2.0 –10 –200 –1.0 TJ = 25°C IC = –10 mA VCE = –5.0 V TA = 25°C 0 –0.5 –2.0 –5.0 –20 –50 –100 –0.05 –0.2 –0.5 –2.0 –5.0 –100 mA –20 mA –1.4 –1.8 –2.2 –2.6 –3.0 –0.5 –5.0 –20 –50 –100 –55 °C to 125°C θVB for VBE –2.0 –5.0 –20 –50 –100 Figure 11. Capacitance VR, REVERSE VOLTAGE (VOLTS) 40 Figure 12. Current–Gain – Bandwidth Product IC, COLLECTOR CURRENT (mA) –0.1 –0.2 –1.0 –50 2.0 –2.0 –10 –100 100 200 500 50 20 20 10 6.0 4.0 –1.0 –10 –100 VCE = –5.0 V –0.5 –5.0 –20 TJ = 25°C Cob Cib 8.0 –50 mA –200 mA |
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