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BC558B Scheda tecnica(PDF) 4 Page - ON Semiconductor

Il numero della parte BC558B
Spiegazioni elettronici  Amplifier Transistors(PNP Silicon)
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BC558B Scheda tecnica(HTML) 4 Page - ON Semiconductor

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BC556,B BC557A,B,C BC558B
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC556
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
–0.8
–1.0
–0.6
–0.2
–0.4
1.0
2.0
–0.1
–1.0
–10
–200
–0.2
0.2
0.5
–0.2
–1.0
–10
–200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = –5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–1.0
–1.2
–1.6
–2.0
–0.02
–1.0
–10
0
–20
–0.1
–0.4
–0.8
–0.2
–2.0
–10
–200
–1.0
TJ = 25°C
IC =
–10 mA
VCE = –5.0 V
TA = 25°C
0
–0.5
–2.0
–5.0
–20
–50
–100
–0.05
–0.2
–0.5
–2.0
–5.0
–100 mA
–20 mA
–1.4
–1.8
–2.2
–2.6
–3.0
–0.5
–5.0
–20
–50
–100
–55
°C to 125°C
θVB for VBE
–2.0 –5.0
–20
–50 –100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2
–1.0
–50
2.0
–2.0
–10
–100
100
200
500
50
20
20
10
6.0
4.0
–1.0
–10
–100
VCE = –5.0 V
–0.5
–5.0
–20
TJ = 25°C
Cob
Cib
8.0
–50 mA
–200 mA


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