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SI3420DV-T1 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI3420DV-T1 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si3420DV Vishay Siliconix Document Number: 71097 S-31725—Rev. B, 18-Aug-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 0 20406080 100 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 01234 0 1 2 3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 100 V ID = 0.5 A ID - Drain Current (A) VGS = 10 V ID = 0.35 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0 2 4 6 8 10 0 2468 10 TJ = 150_C TJ = 25_C ID = 0.35 A 10 1 0.001 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.01 0.1 |
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