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74ALVC00D Scheda tecnica(PDF) 5 Page - NXP Semiconductors

Il numero della parte 74ALVC00D
Spiegazioni elettronici  Quad 2-input NAND gate
Download  16 Pages
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74ALVC00D Scheda tecnica(HTML) 5 Page - NXP Semiconductors

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2003 May 14
5
Philips Semiconductors
Product specification
Quad 2-input NAND gate
74ALVC00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC = 0 V (Power-down mode), the output voltage can be 3.6 V in normal operation.
3. For SO14 packages: above 70
°C derate linearly with 8 mW/K.
For TSSOP14 packages: above 60
°C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C derate linearly with 4.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
1.65
3.6
V
VI
input voltage
0
3.6
V
VO
output voltage
VCC = 1.65 to 3.6 V
0
VCC
V
VCC = 0 V; Power-down mode
0
3.6
V
Tamb
operating ambient temperature
−40
+85
°C
tr,tf
input rise and fall times
VCC = 1.65 to 2.7 V
0
20
ns/V
VCC = 2.7 to 3.6 V
0
10
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+4.6
V
IIK
input diode current
VI <0
−−50
mA
VI
input voltage
−0.5
+4.6
V
IOK
output diode current
VO >VCC or VO <0
−±50
mA
VO
output voltage
notes 1 and 2
−0.5
VCC + 0.5 V
Power-down mode; note 2
−0.5
+4.6
V
IO
output source or sink current
VO =0toVCC
−±50
mA
ICC, IGND
VCC or GND current
−±100
mA
Tstg
storage temperature
−65
+150
°C
Ptot
power dissipation per package
Tamb = −40 to +125 °C; note 3
500
mW


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