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NZT749 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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NZT749 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2004 Fairchild Semiconductor Corporation Rev. A, July 2004 Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -35 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current (DC) - Continuous -4.0 A TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Voltage IC = -10mA, IB = 0 -25 V V(BR)CBO Collector-Base Voltage IC = -100µA, IE = 0 -35 V V(BR)EBO Emitter-Base Voltage IE = -10µA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -30V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEB = -4V, IC = 0 -0.1 µA On Characteristics * hFE DC Current Gain VCE = -2.0V, IC = -50mA VCE = -2.0V, IC = -1.0A VCE = -2.0V, IC = -2.0A 70 80 65 300 VCE(sat) Collector-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -0.3 V VBE(sat) Base-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -1.25 V VBE(on) Base-Emitter On Voltage IC = -1.0A, VCE = -2.0V -1.0 V Small Signal Characteristics fT Current gain Bandwidth Product VCE = -5.0V, IC = -50mA f = 100MHz 75 MHz Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 1.2 9.7 W mW/ °C RθJA Thermal Resistance, Junction to Ambient 103 °C/W NZT749 PNP Current Driver Transistor • This device is designed for power amplifier, regulator and switching circuit where speed is important. • Sourced from process 5P. 1. Base 2, 4. Collector 3. Emitter SOT-223 1 2 4 3 |
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