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NZT749 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte NZT749
Spiegazioni elettronici  PNP Current Driver Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

NZT749 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
Rev. A, July 2004
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T
a=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
-25
V
VCBO
Collector-Base Voltage
-35
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current (DC)
- Continuous
-4.0
A
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Voltage
IC = -10mA, IB = 0
-25
V
V(BR)CBO
Collector-Base Voltage
IC = -100µA, IE = 0
-35
V
V(BR)EBO
Emitter-Base Voltage
IE = -10µA, IC = 0
-5.0
V
ICBO
Collector Cut-off Current
VCB = -30V, IE = 0
-100
nA
IEBO
Emitter Cut-off Current
VEB = -4V, IC = 0
-0.1
µA
On Characteristics *
hFE
DC Current Gain
VCE = -2.0V, IC = -50mA
VCE = -2.0V, IC = -1.0A
VCE = -2.0V, IC = -2.0A
70
80
65
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
-0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
-1.25
V
VBE(on)
Base-Emitter On Voltage
IC = -1.0A, VCE = -2.0V
-1.0
V
Small Signal Characteristics
fT
Current gain Bandwidth Product
VCE = -5.0V, IC = -50mA
f = 100MHz
75
MHz
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
1.2
9.7
W
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
103
°C/W
NZT749
PNP Current Driver Transistor
• This device is designed for power amplifier, regulator and switching
circuit where speed is important.
• Sourced from process 5P.
1. Base 2, 4. Collector 3. Emitter
SOT-223
1
2
4
3


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