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SS2H10 Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SS2H10
Spiegazioni elettronici  High-Voltage Surface Mount Schottky Rectifier
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SS2H9 & SS2H10
Document Number 88750
28-Jun-05
Vishay Semiconductors
www.vishay.com
1
DO-214AA (SMB)
High-Voltage Surface Mount Schottky Rectifier
High Barrier Tecnology for improved high
temperature performance
Major Ratings and Characteristics
IF(AV)
2.0 A
VRRM
90 V, 100 V
IFSM
75 A
VF
0.65 V
IR
10 µA
Tj max.
175 °C
Features
• Low profile package
• Guardring for overvoltage protection
• Ideal for automated placement
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per J-
STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified#
Parameter
Symbol
SS2H9
SS2H10
Unit
Device marking code
MS9
MS10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at: TL = 130 °C
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 KHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dv/dt
10000
V/µs
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C


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