BC848CDXV6T1 datasheet(2/6 Pages) ONSEMI

Il numero della parte	BC848CDXV6T1

Spiegazioni elettronici	Dual General Purpose Transistors

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Produttore elettronici	ONSEMI [ON Semiconductor]

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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector - Emitter Breakdown Voltage

(IC = 10 mA)

BC847CDXV6T1

BC848CDXV6T1

V(BR)CEO

45

30

-

V

Collector - Emitter Breakdown Voltage

(IC = 10 µA, VEB = 0)

BC847CDXV6T1

BC848CDXV6T1

V(BR)CES

50

30

-

V

Collector - Base Breakdown Voltage

(IC = 10 mA)

BC847CDXV6T1

BC848CDXV6T1

V(BR)CBO

50

30

-

V

Emitter - Base Breakdown Voltage

(IE = 1.0 mA)

BC847CDXV6T1

BC848CDXV6T1

V(BR)EBO

6.0

5.0

-

V

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO

-

15

5.0

nA

µA

ON CHARACTERISTICS

DC Current Gain

(IC = 10 µA, VCE = 5.0 V)

(IC = 2.0 mA, VCE = 5.0 V)

hFE

-

420

270

520

-

800

-

Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VCE(sat)

-

0.25

0.6

V

Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VBE(sat)

-

0.7

0.9

-

V

Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

VBE(on)

580

-

660

-

700

770

mV

SMALL- SIGNAL CHARACTERISTICS

Current - Gain - Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

-

MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Cobo

-

4.5

pF

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ,f = 1.0 kHz, BW = 200 Hz)

NF

-

10

dB

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