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STPR620CFP Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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STPR620CFP Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 7 page STPR620CT/CF/CFP 2/7 Symbol Test Conditions Min. Typ. Max. Unit IR * Tj = 25°C VR =VRRM 50 µA Tj = 100°C 0.6 mA VF** Tj = 125 °CIF =3A 0.99 V Tj = 125 °CIF =6A 1.20 Tj =25 °CIF =6A 1.25 Pulse test : *tp=5ms, δ <2% ** tp = 380 µs, δ <2% ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit trr Tj = 25°C IF = 0.5A IR =1A Irr = 0.25A 30 ns tfr Tj =25 °CIF =1A VFR =1.1xVF tr=10ns 20 ns VFP Tj =25 °CIF =1A tr=10ns 3 V To evaluate the conduction losses use the following equation : P=0.78xIF(AV) + 0.070 x IF 2 (RMS) RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case TO-220AB Per diode 6.5 °C/W ISOWATT220AB TO-220FPAB Per diode 8.5 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES Fig. 2: Peak current versus form factor (Per diode). Fig. 1: Average forward power dissipation versus average forward current (Per diode). |
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