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TPCS8104 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte TPCS8104
Spiegazioni elettronici  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
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TPCS8104 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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TPCS8104
2002-04-05
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
Rth (ch-a)
114
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
Rth (ch-a)
208
°C/W
Marking (Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −11 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: ○ on lower right of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
(b)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
(a)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
Type
S8104


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