2SK3230B datasheet(3/5 Pages) NEC

Il numero della parte	2SK3230B

Spiegazioni elettronici	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

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Produttore elettronici	NEC [NEC]

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Data Sheet D17283EJ1V0DS

3

2SK3230B

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF POWER DISSIPATION

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

TA - Ambient Temperature - °C

0

200

400

600

800

1000

0

2468

10

0 V

−0.2 V

−0.3 V

−0.1 V

VGS = 0.2 V

0.1 V

VDS - Drain to Source Voltage - V

GATE TO SOURCE CURRENT vs.

GATE TO SOURCE VOLTAGE

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

0

10

20

30

40

−10

−20

−30

−40

0.2 0.4 0.6 0.8

−0.2

−0.4

−0.6

−0.8

VGS - Gate to Source Voltage - V

0

200

400

600

800

1000

1200

1400

1600

-0.8 -0.6 -0.4 -0.2

0

0.2 0.4 0.6 0.8

1

VDS = 2.0 V

VGS - Gate to Source Voltage - V

INPUT CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER ADMITTANCE AND GATE

CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE

DRAIN CURRENT

1

10

110

100

VGS = 0 V

f = 1.0 MHz

VDS - Drain to Source Voltage - V

0.1

1

10

100

1000

| yfs |

VGS(off)

VDS = 2.0 V

IDSS - Zero Gate Voltage Drain Current -

µA

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