SI7860DP datasheet(1/4 Pages) VISHAY

Il numero della parte	SI7860DP

Spiegazioni elettronici	N-Channel Reduced Qg, Fast Switching MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D PWM Optimized for High Efficiency

D New Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

D 100% Rg Tested

APPLICATIONS

D Buck Converter

- High Side or Low Side

D Synchronous Rectifier

- Secondary Rectifier

Si7860DP

Vishay Siliconix

Document Number: 71854

S-32040—Rev. C, 13-Oct-03

www.vishay.com

1

N-Channel Reduced Qg, Fast Switching MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

30

0.008 @ VGS = 10 V

18

30

0.011 @ VGS = 4.5 V

15

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Ordering Information: Si7860DP-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

18

11

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

15

8

Pulsed Drain Current

IDM

"50

A

Continuous Source Current (Diode Conduction)a

IS

4.1

1.5

Avalanche Current

L= 0 1 mH

IAS

30

Single Pulse Avalanche Energy

L= 0.1 mH

EAS

45

mJ

Maximum Power Dissipationa

TA = 25_C

PD

5

1.8

W

Maximum Power Dissipationa

TA = 70_C

PD

3.2

1.1

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction to Ambient (MOSFET)a

t v 10 sec

R

20

25

Maximum Junction-to-Ambient (MOSFET)a

Steady State

RthJA

56

70

_C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.8

2.3

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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Vishay Siliconix	SI7860DP-T1	147Kb / 7P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. E, 09-Feb-09

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