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SI7860DP Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI7860DP Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 4 page FEATURES D TrenchFETr Power MOSFET D PWM Optimized for High Efficiency D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D Buck Converter - High Side or Low Side D Synchronous Rectifier - Secondary Rectifier Si7860DP Vishay Siliconix Document Number: 71854 S-32040—Rev. C, 13-Oct-03 www.vishay.com 1 N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.008 @ VGS = 10 V 18 30 0.011 @ VGS = 4.5 V 15 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 Bottom View N-Channel MOSFET G D S Ordering Information: Si7860DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 18 11 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 15 8 Pulsed Drain Current IDM "50 A Continuous Source Current (Diode Conduction)a IS 4.1 1.5 Avalanche Current L= 0 1 mH IAS 30 Single Pulse Avalanche Energy L= 0.1 mH EAS 45 mJ Maximum Power Dissipationa TA = 25_C PD 5 1.8 W Maximum Power Dissipationa TA = 70_C PD 3.2 1.1 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction to Ambient (MOSFET)a t v 10 sec R 20 25 Maximum Junction-to-Ambient (MOSFET)a Steady State RthJA 56 70 _C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.8 2.3 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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