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SI7886ADP-T1-E3 Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI7886ADP-T1-E3 Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D DC/DC Converters D Synchronous Rectifiers RoHS COMPLIANT Available Si7886ADP Vishay Siliconix Document Number: 73156 S-51016—Rev. B, 23-May-05 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 30 0.0040 @ VGS = 10 V 25 47 30 0.0048 @ VGS = 4.5 V 23 47 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 Bottom View Ordering Information: Si7886ADP-T1 Si7886ADP-T1—E3 (Lead (Pb)-Free) N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "12 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 25 15 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 20 12 Pulsed Drain Current (10 ms Pulse Width) IDM 60 A Continuous Source Current (Diode Conduction)a IS 4.5 1.6 Avalanche Current L= 0 1 mH IAS 50 Single Pulse Avalanche Energy L= 0.1 mH EAS 125 mJ Maximum Power Dissipationa TA = 25_C PD 5.4 1.9 W Maximum Power Dissipationa TA = 70_C PD 3.4 1.2 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 18 23 Maximum Junction-to-Ambienta Steady State RthJA 50 65 _C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.5 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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