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SPI11N60C3 Scheda tecnica(PDF) 9 Page - Infineon Technologies AG |
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SPI11N60C3 Scheda tecnica(HTML) 9 Page - Infineon Technologies AG |
9 / 14 page 2001-07-05 Page 9 SPP11N60C3, SPB11N60C3 SPI11N60C3 Preliminary data 17 Typ. switching losses E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=11A 0 10 20 30 40 50 Ω 70 RG 0 0.04 0.08 0.12 0.16 mWs 0.24 Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 16 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=6.8Ω 0 2 4 6 8 A 12 ID 0 0.005 0.01 0.015 0.02 0.025 0.03 mWs 0.04 Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 18 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0 1 2 3 4 5 6 7 8 9 A 11 Tj(START)=125°C Tj(START)=25°C 19 Avalanche energy EAS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 0 50 100 150 200 250 mJ 350 |
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