SI4973DY datasheet(2/5 Pages) VISHAY

Il numero della parte	SI4973DY

Spiegazioni elettronici	Dual P-Channel 25-V (G-S) MOSFET

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Si4973DY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72164

S-03599—Rev. A, 31-Mar-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 mA

-1

-3

V

Gate Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "25 V

"200

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 24 V, VGS = 0 V

-1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = - 24 V, VGS = 0 V, TJ = 55_C

-25

mA

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 10 V

-30

A

Drain Source On State Resistancea

rDS( )

VGS = - 10 V, ID = - 7.6 A

0.018

0.023

W

Drain-Source On-State Resistancea

rDS(on)

VGS = - 6 V, ID = - 6.8 A

0.023

0.029

W

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 7.6 A

22

S

Diode Forward Voltagea

VSD

IS = - 1.7 A, VGS = 0 V

- 0.8

- 1.2

V

Dynamicb

Total Gate Charge

Qg

37

56

Gate-Source Charge

Qgs

VDS = - 15 V, VGS = - 10 V, ID = - 7.6 A

6

nC

Gate-Drain Charge

Qgd

11

Turn-On Delay Time

td(on)

10

15

Rise Time

tr

VDD = - 15 V, RL = 15 W

15

25

Turn-Off Delay Time

td(off)

VDD = - 15 V, RL = 15 W

ID ^ - 1 A, VGEN = - 10 V, RG = 6 W

115

180

ns

Fall Time

tf

90

140

Source-Drain Reverse Recovery Time

trr

IF = - 1.7 A, di/dt = 100 A/ms

80

120

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

6

12

18

24

30

0

1234

5

VGS = 10 thru 5 V

-55

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

3 V

4 V

TC = 125_C

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