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2SK3175A Scheda tecnica(PDF) 4 Page - Hitachi Semiconductor |
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2SK3175A Scheda tecnica(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SK3175A Rev.0, Aug. 2001, page 4 of 8 0.1 0.2 2 10 20 2 10 0.2 1 0.1 Forward Transfer Admittance vs. Drain Current 0.1 0.2 0.5 2 10 20 Drain to Source Saturatioin Voltage vs. Drain Current 3.6 3.2 2.8 2.4 2.0 1.6 - 25 Ambient Temperature Ta ( °C) Gate to Source Cutoff Voltage vs. Ambient Temperature 0 25 50 75 100 125 Input Capacitance vs. Gate to Source Voltage 165 145 140 -10 - 6 - 2 2 610 V = 0 f = 1 MHz DS 150 155 160 0.5 1 5 0.5 5 GS V = 10 V Pulse Test 15 50 0.01 0.02 0.05 0.1 0.2 0.5 2 5 1 DS V = 10 V Pulse Test ID = 1 mA 100 mA V = 10 V DS 1 A 10 mA D Drain Current I (A) D Drain Current I (A) GS Gate to Source Voltage V (V) 170 |
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