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2PB1424 Scheda tecnica(PDF) 5 Page - NXP Semiconductors

Il numero della parte 2PB1424
Spiegazioni elettronici  20 V, 3 A PNP low VCEsat transistor
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PB1424 Scheda tecnica(HTML) 5 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 May 2005
5 of 11
Philips Semiconductors
2PB1424
20 V, 3 A PNP low VCEsat (BISS) transistor
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −30 V; IE = 0 A
-
-
−0.1
µA
VCB = −30 V; IE = 0 A;
Tj = 150 °C
--
−10
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−0.1
µA
hFE
DC current gain
VCE = −2 V; IC = −0.1 A
180
-
390
VCEsat
collector-emitter
saturation voltage
IC = −2 A; IB = −100 mA
[1] --
−0.5
V
VBEon
base-emitter turn-on
voltage
VCE = −10 V; IC = −5mA
-
-
−0.7
V
VCE = −1 V; IC = −1A
-
-
−1V
fT
transition frequency
VCE = −2 V; IC = −500 mA;
f = 100 MHz
-
140
-
MHz
Cc
collector capacitance
VCB = −10 V; IE =ie =0A;
f=1MHz
-27
-
pF


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