Motore di ricerca datesheet componenti elettronici
Selected language     Italian  ▼
il nome della parte
         Dettagli 


KFM1G16Q2M-DED5 Datasheet(Scheda tecnica) 3 Page - Samsung semiconductor

Numero della parte KFM1G16Q2M-DED5
Dettagli  MuxOneNAND FLASH MEMORY
Download  124 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Produttore  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo 

 
 3 page
background image
MuxOneNAND1G(KFM1G16Q2M-DEB5)
FLASH MEMORY
3
MuxOneNAND2G(KFN2G16Q2M-DEB5)
Document Title
MuxOneNAND
Revision History
Revision No.
0.0
0.1
0.2
0.3
Remark
Draft
Advance
Preliminary
Preliminary
Draft Date
Dec. 3, 2003
May 19, 2004
Nov. 4, 2004
Jan. 10, 2005
History
Initial issue.
1. Corrected the errata
2. Added Data Protection Scheme during Power-down
3. ECC description is revised.
4. Added Read while Load and Write While Program diagram.
5. Revised and added OTP description.
6. Added Write Protection description
7. Added Multi Block Erase operation notes
8. Added NAND Array Memory Map
9. RDY Conf bit in System Configuration Register is added.
10. Controller Status Register is revised.
11. Added DC/AC parameters
12. Revised OTP area assignment
13. Added the Addressing for program operation
14. Added INT guidance
15. Added Reset descriptions.
16. Revised Status Flag
1. Updated all description with a new format
1. Corrected the errata
2. Revised typical value of ISB from 50uA to 10uA
3. Revised maximum value of ISB from 100uA to 50uA
4. Revised erase current as TBD
5. Revised maximum value of tCE, tAA and tACC from 70ns to 76ns
6. Revised Vcc-IO description
7. Revised Spare Area description
8. Added Version ID Register information
9. Added extra information on Controller Status Register
10. Added commands related to Interrupt Status Register bits
11. Revised Write Protection Status on Chapter 3.4.3
12. Revised Copy-Back Program Operation description
13. Added Copy-Back Program Operation with Random Data Input
14. Added extra information on Multi-Block Erase Operation
15. Disabled FBA restriction in OTP operation
16. Revised Cache Read Flow Chart
17. Added DQ6 Toggle Bit Information on Chapter 3.13
18. Added ISB information on DDP
19. Revised Reset Parameter descriptions
20. Added Asynchronous Write timing diagram
21. Added RDY information on Warm Reset Timing diagram
22. Added information on Data Protection Timing During Power Down
23. Added Toggle Bit Timing in Asynchronous Read timing diagram
24. Revised Interrupt pin rise and falling slope graph
25. Added restriction on address register setting on Dual Operations
26. Added restriction on address register setting on Cache Read Operation
27. Added Technical Note
1.1
Revision History




Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49  50  51  52  53  54  55  56  57  58  59  60  61  62  63  64  65  66  67  68  69  70  71  72  73  74  75  76  77  78  79  80  81  82  83  84  85  86  87  88  89  90  91  92  93  94  95  96  97  98  99  100   ...More


Datasheet Download



Il numero della parte collegato

Numero parteDettagliHtml ViewProduttore
V29LC51000512 KILOBIT 65 536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 1 2 3 4 5 MoreMosel Vitelic, Corp
M25P101 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface 1 2 3 4 5 MoreSTMicroelectronics
M29F002BT2 Mbit 256Kb x8 Boot Block Single Supply Flash Memory 1 2 3 4 5 MoreSTMicroelectronics
M29F800AT8 Mbit 1Mb x8 or 512Kb x16 Boot Block Single Supply Flash Memory 1 2 3 4 5 MoreSTMicroelectronics
M29W400T4 Mbit 512Kb x8 or 256Kb x16 Boot Block Low Voltage Single Supply Flash Memory 1 2 3 4 5 MoreSTMicroelectronics
M36W832TE32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product 1 2 3 4 5 MoreSTMicroelectronics
M59DR016C16 Mbit 1Mb x16 Dual Bank Page 1.8V Supply Flash Memory 1 2 3 4 5 MoreSTMicroelectronics
ST662ADC-DC CONVERTER FROM 5V TO 12V 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY 1 2 3 4 5 MoreSTMicroelectronics
TH50VSF3680SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE 1 2 3 4 5 MoreToshiba Semiconductor
K9F2808U0A-16M x 8 Bit NAND Flash Memory 1 2 3 4 5 MoreSamsung semiconductor

URL link

Lei ha avuto il aiuto da alldatasheet?  [ DONATE ]  

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Bookmark   |   scambio Link   |   Ricerca produttore
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl