2N2907AUB datasheet(2/4 Pages) TTELEC

Il numero della parte	2N2907AUB

Spiegazioni elettronici	Surface Mount PNP General Purpose Transistor

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General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Surface Mount PNP General

Purpose Transistor

2N2907AUB (TX, TXV)

Issue D

08/2016

Page 2

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Collector‐Base Voltage

60V

Collector‐Emi er Voltage

60V

Emi er‐Base Voltage

5.0V

Collector Current‐Con nuous

600mA

Opera ng Junc on Temperature (TJ) ‐65° C to +200 °C

Storage Junc on Temperature (Tstg) ‐65° C to +200° C

Power Dissipa on @ TA = 25°C

0.5 W

Power Dissipa on @ Tc = 25° C

1.00 W

(1)

Soldering Temperature (vapor phase reﬂow for 30 seconds)

215° C

Soldering Temperature (heated collet for 5 seconds)

260° C

Electrical Speciﬁcations

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

OFF CHARACTERISTICS

V(BR)CBO

Collector‐Base Breakdown Voltage

60 ‐

V

IC = 10 µA, IE = 0

V(BR)CEO

Collector‐Emi er Breakdown Voltage

60 ‐

V

IC = 10 mA, IB = 0

(2)

V(BR)EBO

Emi er‐Base Breakdown Voltage

5.0 ‐

V

IE = 10 µA, IC = 0

ICBO

Collector‐Base Cutoﬀ Current

10

µA

VCB = 50 V, IE = 0

10

µA

VCB = 50 V, IE = 0, TA = 150° C

IEBO

Emi er‐Base Cutoﬀ Current

10

µA

VCE = 4.0 V, IC = 0

ICES

Collector Emi er Cutoﬀ Current

10

nA

VEB = 50 V

ON CHARACTERISTICS

hFE

75

‐

VCE = 10 V, IC = 0.1 mA

100

450 ‐

VCE = 10 V, IC = 1.0 mA

100

‐

VCE = 10 V, IC = 10 mA

100

300 ‐

VCE = 10 V, IC = 150 mA

(2)

50

‐

VCE = 10 V, IC = 500 mA

(2)

50

‐

VCE = 10 V, IC = 1.0 mA, TA = ‐55°C

Forward‐Current Transfer Ra o

Note:

1. Derate linearly 6.6 mW/°C above 25° C

2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%

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