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AOTF2618L Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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AOTF2618L Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor AOTF2618L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 60 V VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.25mA 1.4 2.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=20A;Tj=25℃ Tj=125℃ 15.8 29.3 19 35.5 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS= 60V; VGS= 0V;Tc=25℃ VDS= 60V; VGS= 0V;Tc=55℃ 1 5 μ A VSDF Diode forward voltage ISD=1A, VGS = 0 V 1.0 V |
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