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IRF6150 Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF6150 Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 3 page HEXFET® Power MOSFET PD - 93943 IRF6150 Parameter Max. Units VSS Source- Source Voltage -20 V IS @ TC = 25°C Continuous Current, VGS1 = VGS2 = -4.5V ±7.9 IS @ TC = 70°C Continuous Current, VGS1 = VGS2 = -4.5V ±6.3 A ISM Pulsed Current ±40 PD @TC = 25°C Power Dissipation 3.0 PD @TC = 70°C Power Dissipation 1.9 Linear Derating Factor 24 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings W www.irf.com 1 True chip-scale packaging is available from International Rectifier. Through the use of advanced processing tech- niques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design that International Rectifier is well known for, provides the designer with an ex- tremely efficient and reliable device. The FlipFET package, is one-third the footprint of a comparable SO-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Description l Ultra Low RSS(on) per Footprint Area l Low Thermal Resistance l Bi-Directional P-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel Symbol Parameter Typ. Max. Units RθJA Junction-to-Ambient 42 °C/W RθJ-PCB Junction-to-PCB mounted 17 ––– Thermal Resistance 07/26/04 VSS RSS(on) max IS -20V 0.036Ω@VGS1,2 = -4.5V -7.9A 0.052Ω@VGS1,2 = -2.5V -6.3A 6 * 6 * OBSOLETE |
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