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2SK1622L Scheda tecnica(PDF) 1 Page - Hitachi Semiconductor

Il numero della parte 2SK1622L
Spiegazioni elettronici  Silicon N-Channel MOS FET
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Produttore elettronici  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK1622L Scheda tecnica(HTML) 1 Page - Hitachi Semiconductor

  2SK1622L Datasheet HTML 1Page - Hitachi Semiconductor 2SK1622L Datasheet HTML 2Page - Hitachi Semiconductor 2SK1622L Datasheet HTML 3Page - Hitachi Semiconductor  
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Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
25
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
100
A
———————————————————————————————————————————
Body to drain diode reverse drain current
IDR
25
A
———————————————————————————————————————————
Channel dissipation
Pch**
50
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW
≤ 10 µs, duty cycle ≤ 1 %
**
Value at TC = 25 °C
2SK1622 L , 2SK1622 S
Silicon N-Channel MOS FET
1
2
3
2, 4
1
3
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
S type
L type
LDPAK


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