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FDD306P Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDD306P
Spiegazioni elettronici  P-Channel 1.8V Specified PowerTrench MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD306P Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
January 2005
FDD306P Rev. C
FDD306P
P-Channel 1.8V Specified PowerTrench® MOSFET
Features
■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V
RDS(ON) = 41 mΩ @ VGS = –2.5 V
RDS(ON) = 90 mΩ @ VGS = –1.8 V
■ Fast switching speed
■ High performance trench technology for extremely
low RDS(ON)
■ High power and current handling capability
Applications
■ DC/DC converter
General Description
This P-Channel 1.8V Specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. It has been opti-
mized for battery power management.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
Gate-Source Voltage
±8V
ID
Drain Current
– Continuous
(Note 3)
–6.7
A
– Pulsed
(Note 1a)
–54
PD
Power Dissipation for Single Operation
(Note 1)
52
W
(Note 1a)
3.8
(Note 1b)
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.9
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Device Marking
Device
Reel Size
Tape width
Quantity
FDD306P
FDD306P
13’’
12mm
2500 units
G
S
D
TO-252
S
G
D


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