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TLP668J Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLP668J Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP668J 2002-09-25 2 Maximum Ratings (Ta ==== 25°C) Characteristic Symbol Rating Unit Forward current IF 30 mA Forward current derating (Ta = 25°C) ∆IF / °C -0.3 mA / °C Peak forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Off -state output terminal voltage VDRM 600 V Ta = 25°C 100 On -state RMS current Ta = 70°C IT(RMS) 50 mA On -state current derating (Ta = 25°C) ∆IT / °C -1.1 mA / °C Peak on -state current (100µs pulse, 120pps) ITP 2 A Peak nonrepetitive surge current (PW = 10ms, DC = 10%) ITSM 1.2 A Junction temperature Tj 110 °C Storage temperature range Tstg -55~150 °C Operating temperature range Topr -40~100 °C Lead soldering temperature (10sec.) Tsold 260 °C Isolation voltage (AC, 1min., R.H. 60%) (Note 1) BVS 5000 Vrms (Note 1): Device considered a two terminal device: Pins1,2 and 3 shorted together and pins 4 and 6 shorted together. Individual Electrical Characteristics (Ta ==== 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.2 1.4 1.7 V Reverse current IR VR = 3 V ― ― 10 µA Capacitance CT V = 0, f = 1MHz ― 30 ― pF Peak off -state current IDRM VDRM = 600V ― 10 1000 nA Peak on -state voltage VTM ITM = 100mA ― ― 3.0 V Holding current IH ― ― 0.2 ― mA Critical rate of rise of off -state voltage dv / dt Vin = 240rms Ta = 85°C ― 500 ― V/µs Critical rate of rise of commutating voltage dv / dt(c) Vin = 60Vrms IT = 15mArms ― 0.2 ― V/µs |
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