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STF20NM60D Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STF20NM60D Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 15 page STF20NM60D - STP20NM60FD - STW20NM60FD Electrical characteristics 5/15 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 300V, ID = 10A RG =4.7Ω VGS = 10V (see Figure 16) 25 12 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 480 V, ID = 20A, RG =4.7Ω, VGS = 10V (see Figure 16) 8 22 30 ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Forward on voltage ISD = 20 A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, Tj = 25°C di/dt =100A/µs,VDD=60V (see Figure 21) 240 1800 16 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, Tj = 150°C di/dt =100A/µs,VDD=60V (see Figure 21) 396 2960 20 ns nC A |
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