STF20NM60D datasheet(5/15 Pages) STMICROELECTRONICS

Il numero della parte	STF20NM60D

Spiegazioni elettronici	N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STF20NM60D - STP20NM60FD - STW20NM60FD

Electrical characteristics

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Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 300V, ID = 10A

RG =4.7Ω VGS = 10V

(see Figure 16)

25

12

ns

tr(Voff)

tf

tc

Off-voltage rise time

Fall time

Cross-over time

VDD = 480 V, ID = 20A,

RG =4.7Ω, VGS = 10V

(see Figure 16)

8

22

30

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

20

80

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward on voltage

ISD = 20 A, VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20 A, Tj = 25°C

di/dt =100A/µs,VDD=60V

(see Figure 21)

240

1800

16

ns

nC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20 A, Tj = 150°C

di/dt =100A/µs,VDD=60V

(see Figure 21)

396

2960

20

ns

nC

A

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