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RIC7113A4 Scheda tecnica(PDF) 4 Page - International Rectifier |
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RIC7113A4 Scheda tecnica(HTML) 4 Page - International Rectifier |
4 / 9 page 4 www.irf.com RIC7113A4 Radiation characteristics Radiation Performance International Rectifier Radiation Hardened gate drivers are tested to verify their hardness capability. The hardness assurance program at International rectifier uses a Cobalt-60 (60 Co) source and heavy ion irradiation. Every wafer shall be tested per MIL-STD-883, Method 1019, test condition A “Ionizing Radiation (Total Dose) Test Procedure”. Both pre- and post- irradiation performances are tested and specified using the same drive circuitry and test conditions to provide a direct comparison. For Static Irradiation Test Conditions refer to figure 7. Static Electrical Characteristics Tj = 25°C Symbol Parameter 100K Rads (Si) Units Test Conditions Min Max V IH Logic “1” Input Voltage 3.1 — VDD = 5V 6.4 — VDD = 10V 9.5 — VDD = 15V 12.5 — VDD = 20V V IL Logic “0” Input Voltage — 1.8 VDD = 5V — 3.8 VDD = 10V 6.0 VDD = 15V — 8.3 VDD = 20V VOH High Level Output Voltage, VBIAS - VO — 1.2 VIN =VIH, IO = 0A VOL Low Level Output Voltage, VO — 0.1 VIN =VIH, IO = 0A ILK Offset Supply Leakage Current — 50 VB =VS = 400A IQBS Quiescent VBS Supply Current — 230 VIN =0V or VDD IQCC Quiescent VCC Supply Current — 340 VIN =0V or VDD IQDD Quiescent VDD Supply Current — 30 VIN =0V or VDD IIN+ Logic “1” Input Bias Current — 40 VIN =VDD IIN- Logic “0” Input Bias Current — 1.0 VIN =0V VBSUV+ VBS Supply Undervoltage Positive 7.5 9.7 Going Threshold VBSUV- VBS Supply Undervoltage Negative 7.0 9.4 Going Threshold VCCUV+ VCC Supply Undervoltage Positive 7.4 9.9 Going Threshold VCCUV- VCC Supply Undervoltage Negative 7.0 9.6 Going Threshold IO+ Output High Short Circuit Pulsed 2.0 — VO =0V, VIN =VDD Current PW < 10 µs IO- Output Low Short Circuit Pulsed 2.0 — VO =15V, VIN =0V Current PW < 10 µs µA V V A V |
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