TC2696 datasheet(2/2 Pages) ETC

Il numero della parte	TC2696

Spiegazioni elettronici	2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

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TC2696

REV.2_04/12/2004

TRANSCOM, INC., 90 Dasoong 7

th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P2/2

ABSOLUTE MAXIMUM RATINGS (TA=25

°°°°C)

Symbol

Parameter

Rating

VDS

Drain-Source Voltage

12 V

VGS

Gate-Source Voltage

-5 V

IDS

Drain Current

IDSS

RF Input Power, CW

26 dBm

PT

Continuous Dissipation

7.7 W

TCH

Channel Temperature

175

°C

TSTG

Storage Temperature

- 65

°C to +175 °C

RECOMMANDED OPERATING CONDITION

Symbol

Parameter

Rating

VDS

Drain to Source Voltage

8 V

ID

Drain Current

600 mA

HANDLING PRECAUTIONS:

The user must operate in a clean, dry environment.

Electrostatic Discharge (ESD) precautions should be

observed at all stages of storage, handling, assembly,

and testing. The static discharge must be less than

300V.

TYPICAL SCATTERING PARAMETERS (TA=25

°°°°C)

VDS = 8 V, IDS = 600 mA

FREQUENCY

S11

S21

S12

S22

(GHz)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

2

0.9232

175.28

1.8019

58.43

0.0288

-14.46

0.6268

174.83

3

0.9179

161.34

1.2279

38.12

0.0303

-26.85

0.6531

167.56

4

0.9098

148.40

0.9600

19.07

0.0327

-38.61

0.6737

158.81

5

0.8978

134.59

0.8236

0.11

0.0364

-50.96

0.6847

148.28

6

0.8806

118.62

0.7599

-19.79

0.0420

-64.88

0.6839

135.52

7

0.8574

99.05

0.7426

-41.79

0.0496

-81.49

0.6699

119.60

8

0.8295

74.18

0.7529

-67.22

0.0595

-102.04

0.6430

98.92

9

0.8045

42.52

0.7648

-97.22

0.0701

-127.59

0.6085

71.06

OUTLINE DIMENSIONS (in mm)

Source

Drain

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