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TPD1032F Scheda tecnica(PDF) 5 Page - Toshiba Semiconductor

Il numero della parte TPD1032F
Spiegazioni elettronici  Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
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TPD1032F Scheda tecnica(HTML) 5 Page - Toshiba Semiconductor

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TPD1032F
2006-10-31
5
Note 4:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both device.)
Note 5: Active clamp capability (single pulse) test condition
VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 3 A, RG = 25 Ω
Note 6: Repetitive rating, pulse width limited by maximum channel temperature.
Electrical Characteristics
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Drain-source clamp voltage
V (CL) DSS
Tch=-40~110℃
VIN = 0 V,
ID=1mA
40
60
V
Tch=25℃
1.0
2.8
Input threshold voltage
Vth
Tch=-40~110℃
VDS = 13 V,
ID=10mA
0.9
3.0
V
Tch=25℃
3
7
Protective circuit operation
input voltage range
VIN (opr)
Tch=-40~110℃
3.5
7
V
Tch=25℃
10
Drain cut-off current
IDSS
Tch=-40~110℃
VIN = 0 V, VDS=20V
100
μA
IIN (1)
Tch=25℃
VIN = 5 V, at normal
operation
300
Input current
IIN (2)
Tch=-40~110℃
VIN = 5 V, when
overcurrent protective
circuit is actuated
350
μA
Tch=25℃
0.25
0.4
Drain-source on resistance
RDS (ON)
Tch=-40~110℃
VIN = 5 V, ID = 1 A
0.6
Ω
Overtemperature protection
TS
VIN = 5 V
150
160
°C
Tch=25℃
3
3.7
Overcurrent protection
IS
Tch=-40~110℃
VIN = 5 V
2
A
Tch=25℃
30
tON
Tch=-40~110℃
60
Tch=25℃
60
Switching time
tOFF
1
Tch=-40~110℃
VDD = 13 V, VIN = 0V/5 V,
ID = 1 A
90
μs
Source-drain diode forward
voltage
VDSF
Tch=25℃
IF = 3 A, VIN = 0 V
1.7
V
Test Circuit 1
Switching time measuring circuit
Test Circuit
Measured Waveforms
VIN Waveform
VOUT Waveform
5 V
90%
tON
10%
10%
90%
tOFF
13 V
To be set so that
ID = 1 A.
V
TPD1032F
IN
OUT GND


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