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TPD1032F Scheda tecnica(PDF) 5 Page - Toshiba Semiconductor |
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TPD1032F Scheda tecnica(HTML) 5 Page - Toshiba Semiconductor |
5 / 5 page TPD1032F 2006-10-31 5 Note 4: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both device.) Note 5: Active clamp capability (single pulse) test condition VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 3 A, RG = 25 Ω Note 6: Repetitive rating, pulse width limited by maximum channel temperature. Electrical Characteristics Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Drain-source clamp voltage V (CL) DSS ⎯ Tch=-40~110℃ VIN = 0 V, ID=1mA 40 ⎯ 60 V Tch=25℃ 1.0 ⎯ 2.8 Input threshold voltage Vth ⎯ Tch=-40~110℃ VDS = 13 V, ID=10mA 0.9 ⎯ 3.0 V Tch=25℃ ⎯ 3 ⎯ 7 Protective circuit operation input voltage range VIN (opr) ⎯ Tch=-40~110℃ ⎯ 3.5 ⎯ 7 V Tch=25℃ ⎯ ⎯ 10 Drain cut-off current IDSS ⎯ Tch=-40~110℃ VIN = 0 V, VDS=20V ⎯ ⎯ 100 μA IIN (1) ⎯ Tch=25℃ VIN = 5 V, at normal operation ⎯ ⎯ 300 Input current IIN (2) ⎯ Tch=-40~110℃ VIN = 5 V, when overcurrent protective circuit is actuated ⎯ ⎯ 350 μA Tch=25℃ ⎯ 0.25 0.4 Drain-source on resistance RDS (ON) ⎯ Tch=-40~110℃ VIN = 5 V, ID = 1 A ⎯ ⎯ 0.6 Ω Overtemperature protection TS ⎯ ⎯ VIN = 5 V 150 160 ⎯ °C Tch=25℃ 3 3.7 ⎯ Overcurrent protection IS ⎯ Tch=-40~110℃ VIN = 5 V 2 ⎯ ⎯ A Tch=25℃ ⎯ ⎯ 30 tON Tch=-40~110℃ ⎯ ⎯ 60 Tch=25℃ ⎯ ⎯ 60 Switching time tOFF 1 Tch=-40~110℃ VDD = 13 V, VIN = 0V/5 V, ID = 1 A ⎯ ⎯ 90 μs Source-drain diode forward voltage VDSF ⎯ Tch=25℃ IF = 3 A, VIN = 0 V ⎯ ⎯ 1.7 V Test Circuit 1 Switching time measuring circuit Test Circuit Measured Waveforms VIN Waveform VOUT Waveform 5 V 90% tON 10% 10% 90% tOFF 13 V To be set so that ID = 1 A. V TPD1032F IN OUT GND |
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