Motore di ricerca datesheet componenti elettronici |
|
TC9WMA1FK Scheda tecnica(PDF) 8 Page - Toshiba Semiconductor |
|
TC9WMA1FK Scheda tecnica(HTML) 8 Page - Toshiba Semiconductor |
8 / 12 page TC9WMA1FK 2001-10-16 8 E 2 PROM Characteristics (GND ==== 0 V, 3.0 V <<<<==== VCC <<<<==== 3.6 V, Topr ==== ----40~85°C) Characteristics Symbol Test Condition Min Typ. Max Unit All erase time tE ¾ 6 10 ms Program time tP ¾ 6 10 ms Endurance NEW 1 ´ 10 5 ¾ ¾ Times Data retention time tRET 10 ¾ ¾ Year E 2 PROM Characteristics (GND ==== 0 V, 2.7 V <<<<==== VCC <<<<==== 3.6 V, Topr ==== ----40~85°C) Characteristics Symbol Test Condition Min Typ. Max Unit All erase time tE ¾ 7 13 ms Program time tP ¾ 7 13 ms Endurance NEW 1 ´ 10 5 ¾ ¾ Times Data retention time tRET 10 ¾ ¾ Year Capacitance Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition VCC (V) Typ. Unit Input capacitance CIN 3.3 4 pF Output capacitance CO 3.3 3 pF Equivalent Internal capacitance CPD fIN = 1 MHz (Note5) 3.3 8.5 pF Note 5: CPD denotes the IC’s internal equivalent capacitance calculated from the amount of current it consumes while operating. The average current consumption during non-loaded operation is obtained from the equations below. ICC (Read) = fCLK・CPD・VCC + ICC1 + ICC2・3.5/24 ICC (Prog) = fCLK・CPD・VCC + ICC1 + ICC3 |
Codice articolo simile - TC9WMA1FK |
|
Descrizione simile - TC9WMA1FK |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |