TC9WMA1FK datasheet(8/12 Pages) TOSHIBA

Il numero della parte	TC9WMA1FK

Spiegazioni elettronici	TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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TC9WMA1FK

2001-10-16

8

E

2

PROM Characteristics (GND

==== 0 V, 3.0 V <<<<==== VCC <<<<==== 3.6 V, Topr ==== ----40~85°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

All erase time

tE

¾

6

10

ms

Program time

tP

¾

6

10

ms

Endurance

NEW

1

´ 10

5

¾

Times

Data retention time

tRET

10

¾

Year

E

2

PROM Characteristics (GND

==== 0 V, 2.7 V <<<<==== VCC <<<<==== 3.6 V, Topr ==== ----40~85°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

All erase time

tE

¾

7

13

ms

Program time

tP

¾

7

13

ms

Endurance

NEW

1

´ 10

5

¾

Times

Data retention time

tRET

10

¾

Year

Capacitance Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

VCC (V)

Typ.

Unit

Input capacitance

CIN

3.3

4

pF

Output capacitance

CO

3.3

3

pF

Equivalent Internal capacitance

CPD

fIN = 1 MHz

(Note5)

3.3

8.5

pF

Note 5: CPD denotes the IC’s internal equivalent capacitance calculated from the amount of current it consumes

while operating.

The average current consumption during non-loaded operation is obtained from the equations below.

ICC (Read) = fCLK･CPD･VCC + ICC1 + ICC2･3.5/24

ICC (Prog) = fCLK･CPD･VCC + ICC1 + ICC3

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