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SI-3002KWD-TL Scheda tecnica(PDF) 6 Page - Allegro MicroSystems |
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SI-3002KWD-TL Scheda tecnica(HTML) 6 Page - Allegro MicroSystems |
6 / 9 page SI-3002KWD 1 A, Low-Dropout, Dual Output, 2.5 V & 3.3 V Regulator 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 Linear Regulators 6 Input Capacitor (C I, 0.1 ∼ 10 µF). This is necessary either when the input line includes inductance or when the wiring is long. Output Capacitor (C O, >22 µF). This device is not designed for a use with a very low ESR output capacitor such as a ceramic capacitor. Output oscillation may occur with that kind of capacitor. ENABLE Input. The ENABLE (control) input features an internal pull-up resistor. Leaving this input open causes the output to turn on. Parallel Operation. Parallel operation to increase load current is not permitted. Determination of DC Input Voltage. The minimum input voltage V I(min) should be higher than the sum of the fixed output voltage and the maximum rated dropout voltage. Overcurrent Protection. The SI-3000KWD series has a built-in fold-back type overcurrent protection circuit, which limits the output current at a start-up mode. It thus cannot be used in applications that require current at the start-up mode such as: (1) constant-current load, (2) power supply with positive and negative outputs to common load (a center-tap type power supply), or (3) raising the output voltage by putting a diode or a resistor between the device ground and system ground. Thermal Protection. Circuitry turns off the pass transistor when the junction temperature rises above 135°C. It is intended only to protect the device from failures due to excessive junction temperatures and should not imply that output short circuits or continuous overloads are permitted. APPLICATIONS INFORMATION Heat Radiation and Reliability. The reliability of the IC is directly related to the junction temperature (T J) in its operation. Accordingly, careful consideration should be given to heat dissipation. The inner frame on which the integrated circuit is mounted is connected to the GND terminal (pin 3). Therefore, it is very effective for heat radiation to enlarge the copper area that is connected to the GND terminal. The graph illus- trates the effect of the copper area on the junction-to- ambient thermal resistance (RθJA). The junction temperature (T J) can be determined from either of the following equations: T J = (PD × R θJA) + TA or T J = (PD × R θJT) + TT where P D = IO1(VI – VO1) + IO2(VI – VO2) and RθJT = 3°C/W. |
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