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2W10M Scheda tecnica(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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2W10M Scheda tecnica(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 600 V - 1000 V IO = 2 A Features • Ideal for printed circuit board • Low forward voltage drop WOM Package • Low leakage current • Types from 600 V up to 1000 V VRRM • Not ESD Sensitive Mechanical Data Case: Molded plastic body Polarity: Color band on body denotes cathode end Weight: 1.1 grams 2W06M thru 2W10M Mounting position: Any Single Phase Silicon Bridge Rectifier • High temperature soldering guaranteed: 250⁰C/ 10 seconds, 0.375" lead length, .5 lbs (2.3kg) tension Terminals: Plated leads, solderable per MIL-STD-202 Method 208 guaranteed Parameter Symbol 2W06M 2W08M Unit Repetitive peak reverse voltage VRRM 600 800 V RMS reverse voltage VRMS 420 560 V DC blocking voltage VDC 600 800 V Operating temperature Tj -65 to 125 -65 to 125 °C Storage temperature Tstg -65 to 150 -65 to 150 °C Parameter Symbol 2W06M 2W08M Unit Maximum average forward rectified current IO 22 A Peak forward surge current IFSM 60 60 A Maximum instantaneous forward voltage drop per bridge element 1.1 1.1 10 10 500 500 μA V Electrical characteristics at Tc = 25 °C, unless otherwise specified Ta = 25 °C IF = 2 A Conditions 1000 700 2W10M -65 to 150 Maximum ratings at Tc = 25 °C, unless otherwise specified Maximum DC reverse current at rated DC blocking voltage IR Ta = 100 °C 1.1 500 VF -65 to 125 Conditions 1000 Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Ta = 50 °C 2 tp = 8.3 ms, half sine 60 10 2W10M Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 |
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