Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

Unit

Repetitive peak reverse voltage

V

1N1188 thru 1N1190R

2. Reverse polarity (R): Stud is anode.

Conditions

1N1188 (R)

1N1189 (R)

1N1190 (R)

500

Silicon Standard

Recovery Diode

400

600

pp

g

RMS reverse voltage

V

DC blocking voltage

V

Continuous forward current

A

Operating temperature

°C

Storage temperature

°C

Parameter

Symbol

Unit

Diode forward voltage

μA

mA

Thermal characteristics

Thermal resistance, junction -

case

°C/W

Reverse current

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

A

V

Conditions

350

280

0.25

0.25

10

10

10

500

400

10

1N1190 (R)

1.2

10

10

-55 to 150

-55 to 150

-55 to 150

-55 to 150

-55 to 150

1N1188 (R)

1N1189 (R)

0.25

35

35

35

595

595

595

420

600

1.2

1.2

-55 to 150

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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