CA3127

FN662 Rev.5.00

Page 3 of 9

Jun 5, 2006

Test Circuits

Input Resistance

Common-Emitter Configuration

-

400

-



Output Resistance

-4.6

-

k



Input Capacitance

-3.7

-

pF

Output Capacitance

-2

-

pF

Magnitude of Forward Transadmittance

-

24

-

mS

NOTE:

3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or

electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.

Electrical Specifications

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT

7

8

4

2

3

6

GEN

10k



BIAS-CURRENT

ADJ

V+

470

0.01

1

F

0.01

F

470pF

51



0.01

1

F

pF

F

F

470pF

1000

pF

NOTES:

4. This circuit was chosen because it conveniently

represents a close approximation in performance to a

properly unilateralized single transistor of this type. The

simplified biasing. The use of the cascode circuit in no

way implies that the transistors cannot be used

individually.

5. E.F. Johnson number 160-104-1 or equivalent.

4

3

2

13

12

14

6

7

5

8

SHIELD

620



1.8pF

0.3

H

1000pF

OHMITE

Z144

(NOTE 5)

25k



1000

pF

1000

pF

560



750



1%

1000

pF

8.2

k



0.47

H

1.5 - 8pF

+12V

TEST

POINT

(NOTE 5)