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MC100EP140DR2 Scheda tecnica(PDF) 3 Page - ON Semiconductor

Il numero della parte MC100EP140DR2
Spiegazioni elettronici  3.3VECL Phase-Frequency Detector
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MC100EP140
http://onsemi.com
3
ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
75 k
W
Internal Input Pullup Resistor
37.5 k
W
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 2 kV
> 200 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL–94 V–0 @ 0.125 in
Transistor Count
457 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS (Note 2)
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
VCC
PECL Mode Power Supply
VEE = 0 V
6
V
VEE
NECL Mode Power Supply
VCC = 0 V
–6
V
VI
PECL Mode Input Voltage
VEE = 0 V
VI  VCC
6
V
VI
PECL Mode In ut Voltage
NECL Mode Input Voltage
VEE = 0 V
VCC = 0 V
VI  VCC
VI  VEE
6
–6
V
V
Iout
Output Current
Continuous
Surge
50
100
mA
mA
TA
Operating Temperature Range
–40 to +85
°C
Tstg
Storage Temperature Range
–65 to +150
°C
θJA
Thermal Resistance (Junction–to–Ambient)
0 LFPM
500 LFPM
8 SOIC
8 SOIC
190
130
°C/W
°C/W
θJC
Thermal Resistance (Junction–to–Case)
std bd
8 SOIC
41 to 44
°C/W
Tsol
Wave Solder
<2 to 3 sec @ 248
°C
265
°C
2. Maximum Ratings are those values beyond which device damage may occur.
100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 3)
–40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
55
70
85
60
74
90
63
78
93
mA
VOH
Output HIGH Voltage (Note 4)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 4)
1755
1880
2005
1755
1880
2005
1755
1880
2005
mV
VIH
Input HIGH Voltage (Single–Ended)
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage (Single–Ended)
1355
1675
1355
1675
1355
1675
mV
IIH
Input HIGH Current
150
150
150
µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to –0.3 V.
4. All loading with 50
W to VCC–2.0 volts.


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