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BTS3035EJ Scheda tecnica(PDF) 15 Page - Infineon Technologies AG |
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BTS3035EJ Scheda tecnica(HTML) 15 Page - Infineon Technologies AG |
15 / 45 page Datasheet 15 Rev. 1.0 2016-09-12 HITFET - BTS3035EJ Smart Low-Side Power Switch Power Stage 5.3 Inductive Load 5.3.1 Output Clamping When switching off inductive loads with low side switches, the Drain-Source voltage VOUT rises above battery potential, because the inductance intends to continue driving the current. To prevent unwanted high voltages the device has a voltage clamping mechanism to keep the voltage at VOUT(CLAMP). During this clamping operation mode the device heats up as it dissipates the energy from the inductance. Therefore the maximum allowed load inductance is limited. See Figure 11 and Figure 12 for more details. Figure 11 Output Clamp Circuitry Figure 12 Switching an Inductive Load GND ( DMOS Source) OUT ( DMOS Drain IGND VBAT ZL IL VOUT t t VOUT VBAT Id ti O t tCl f t IOUT VOUT(CLAMP) VIN |
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