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SZNUD3124LT1G Scheda tecnica(PDF) 4 Page - ON Semiconductor

Il numero della parte SZNUD3124LT1G
Spiegazioni elettronici  Automotive Inductive Load Driver
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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NUD3124, SZNUD3124
www.onsemi.com
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
VBRDSS
28
34
38
V
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 28 V, VGS = 0 V)
(VDS = 28 V, VGS = 0 V, TJ = 125°C)
IDSS
0.5
1.0
50
80
mA
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
IGSS
60
80
90
110
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
VGS(th)
1.3
1.3
1.8
2.0
2.0
V
Drain to Source On−Resistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
RDS(on)
1.4
1.7
0.8
1.1
W
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C)
IDS(on)
150
140
200
mA
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
gFS
500
mmho
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Ciss
32
pf
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Coss
21
pf
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Crss
8.0
pf
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
tPHL
tPLH
tPHL
tPLH
890
912
324
1280
ns
Transition Times:
Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
tf
tr
tf
tr
2086
708
556
725
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.


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