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2SA1015 Scheda tecnica(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA1015 Scheda tecnica(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page Production specification Silicon Epitaxial Planar Transistor 2SA1015 C011 www.gmesemi.com Rev.A 1 FEATURES Complementary To 2SC1815. Excellent HFE Linearity. High voltage and high current. Low noise. Collector-Emitter voltage BVCEO=-50V. APPLICATIONS Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA1015 BA SOT-23 MAXIMUM RATING @ Ta=25 ℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Dissipation 400 mW Tj,Tstg Junction and Storage Temperature -55 to +125 ℃ Pb Lead-free |
Codice articolo simile - 2SA1015_17 |
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Descrizione simile - 2SA1015_17 |
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