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TLPYE23TP Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLPYE23TP Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP 2002-01-18 2 Electrical and Optical Characteristics (Ta ==== 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name ld lP Dl IF Min Typ. IF Typ. Max IF Max VR TLPGE23TP 558 (562) 14 20 850 3000 20 2.1 2.4 20 50 4 TLFGE23TP 565 (568) 15 20 1530 5000 20 2.0 2.4 20 50 4 TLGE23TP 571 (574) 17 20 2720 7000 20 2.0 2.4 20 50 4 TLPYE23TP 580 (583) 14 20 2720 8000 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA mA V Precautions Please be careful of the following: · Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) · If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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