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NZT753 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte NZT753
Spiegazioni elettronici  PNP Current Driver Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
Absolute Maximum Ratings* T
A=25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
A=25°C unless otherwise noted
*Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics * T
A=25°C unless otherwise noted
* Device mounted on FR-4 PCB 36mm
× 18mm × 1.5mm; mounting pad for the collector lead min 6cm2.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
- 100
V
VCBO
Collector-Base Voltage
- 120
V
VEBO
Emitter-Base Voltage
- 5.0
V
IC
Collector Current
- Continuous
- 4.0
A
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ +150
°C
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Off Characteristics
BVCEO
Collector-Emitter Breakdown Voltage
IC = -10mA, IB = 0
-100
V
BVCBO
Collector-Base Breakdown Voltage
IC = -100µA, IE = 0
-120
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -100µA, IC = 0
-5.0
V
ICBO
Collector-Base Cutoff Current
VCB = -100V, IE = 0
TA = 100°C
-0.1
-10
µA
µA
IEBO
Emitter-Base Cutoff Current
VEB = -4V, IC = 0
-0.1
µA
On Characteristics *
hFE
DC Current Gain
VCE = -2.0V, IC = -50mA
VCE = -2.0V, IC = -500mA
VCE = -2.0V, IC = -1.0A
70
100
55
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -1.0A, IC = -50mA
-0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
-1.25
V
VBE(on)
Base-Emitter On Voltage
VCE = -2.0V, IC = -1.0A,
-1.0
V
Small Signal Characteristics
fT
Transition Frequency
VCE = -5V, IC = -100mA, f = 100MHz
75
MHz
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25C
1.2
9.7
W
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
103
°C/W
NZT753
PNP Current Driver Transistor
• This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P.
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter


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