Motore di ricerca datesheet componenti elettronici |
|
IRF100P218 Scheda tecnica(PDF) 5 Page - Infineon Technologies AG |
|
IRF100P218 Scheda tecnica(HTML) 5 Page - Infineon Technologies AG |
5 / 17 page Final Datasheet 5 V1.0 2017-12-18 IR MOSFET-StrongIRFET™ IRF100P218 D S G Table 6 Dynamic characteristics Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward Trans conductance gfs VDS = 25V, ID = 100A 240 - - S Total Gate Charge Qg - 370 555 nC Gate-to-Source Charge Qgs - 100 - Gate-to-Drain Charge Qgd - 80 - Total Gate Charge Sync. (Qg– Qgd) Qsync - 290 - Turn-On Delay Time td(on) VDD = 50V - 50 - ns Rise Time tr ID = 100A - 110 - Turn-Off Delay Time td(off) RG= 2.7 - 170 - Fall Time tf VGS = 10V - 120 - Input Capacitance Ciss VGS = 0V - 25000 - pF Output Capacitance Coss VDS = 50V - 4000 - Reverse Transfer Capacitance Crss ƒ = 250kHz, See Fig.7 - 110 - Effective Output Capacitance (Energy Related) Cosseff.(ER) VGS = 0V, VDS = 0V to 80V - 4710 - Output Capacitance (Time Related) Cosseff.(TR) VGS = 0V, VDS = 0V to 80V - 5540 - ID = 100A VDS = 50V VGS = 10V Table 7 Reverse Diode Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous Source Current IS MOSFET symbol - - 462 A (Body Diode) showing the Pulsed Source Current integral reverse - - 780 (Body Diode) p-n junction diode. Diode Forward Voltage VSD TJ = 25°C, IS= 100A,VGS = 0V - - 1.2 V Peak Diode Recovery dv/dt dv/dt TJ = 175°C, IS = 100A,VDS= 100V - 2.7 - V/ns Reverse Recovery Time trr TJ = 25°C - 110 - ns TJ = 125°C - 120 - Reverse Recovery Charge Qrr TJ = 25°C - 280 - nC TJ = 125°C - 360 - Reverse Recovery Current IRRM TJ = 25°C - 4.7 - A ISM VDD = 85V IF = 100A, di/dt=100A/µs Table 5 Static characteristics Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 100 - - V Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 2mA - 0.04 - V/°C Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 100A - 1.07 1.28 VGS = 6V, ID = 50A - 1.3 1.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 278µA 2.2 - 3.8 V Drain-to-Source Leakage Current IDSS VDS = 100V, VGS = 0V - - 5.0 µA VDS = 100V, VGS = 0V, TJ =125°C - - 100 Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100 nA Gate Resistance RG - 0.6 - m 3 Electrical characteristics Electrical characteristics |
Codice articolo simile - IRF100P218 |
|
Descrizione simile - IRF100P218 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |