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FDS8947A Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDS8947A
Spiegazioni elettronici  Dual P-Channel Enhancement Mode Field Effect Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8947A Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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March 1998
FDS8947A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Absolute Maximum Ratings
T
A = 25
oC unless other wise noted
Symbol
Parameter
FDS8947A
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
-20
V
I
D
Drain Current - Continuous
(Note 1a)
- 4.0
A
- Pulsed
-20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS8947A Rev.B
-4.0 A, -30 V. R
DS(ON) = 0.052@ VGS = -10 V
R
DS(ON) = 0.080@ VGS = -4.5 V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM-6
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
8947A
pin 1
1
5
7
8
2
3
4
6
© 1998 Fairchild Semiconductor Corporation


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