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SB1240 Scheda tecnica(PDF) 1 Page - Diotec Semiconductor |
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SB1240 Scheda tecnica(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page SB1230 ... SB12100 SB1230 ... SB12100 Schottky Barrier Rectifier Diodes Schottky-Gleichrichterdioden IFAV = 12 A VF1 < 0.45 V Tjmax = 150°C VRRM = 30...100 V IFSM = 280/320 A VF125 ~ 0.30 V @ 5 A Version 2018-02-19 Ø 5.4 x 7.5 Dimensions - Maße [mm] Typical Applications Solar Bypass Diodes, Polarity Protection, Free-wheeling diodes, Output Rectification Commercial grade 1) Typische Anwendungen Solar-Bypassdioden, Verpolschutz, Freilaufdioden, Ausgangsgleichrichtung Standardausführung 1) Features Best trade-off between VF and IR 2) Small package outline Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Optimaler Kompromiss zwischen VF und IR 2) Kleine Gehäusebauform Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped in ammo pack On request: on 13” reel 1250 Gegurtet in Ammo-Pack Auf Anfrage: auf 13” Rolle Weight approx. 1 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Maximum ratings 3) Grenzwerte 3) Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Average forward current Dauergrenzstrom IFAV [A], TA = 50°C SB1230* 30 * Will be replaced by / Werden ersetzt durch SB1240-3G 30 12 A SB1240* 40 40 12 A SB1250 50 50 12 A SB1260 60 60 12 A SB1290 90 90 12 A SB12100 100 100 12 A Peak forward surge current Stoßstrom in Fluss-Richtung Half sine-wave Sinus-Halbwelle 50 Hz (10 ms) 60 Hz (8.3 ms) IFSM 280 A 320 A Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+150°C ≤ 200°C 2) Storage temperature – Lagerungstemperatur TS -50...+175°C Characteristics Kennwerte Leakage current – Sperrstrom Tj = 25°C VR = VRRM IR < 500 µA Typical junction capacitance Typische Sperrschichtkapazität SB1230...60 SB1290...100 VR = 4 V Cj 720 pF 350 pF Thermal resistance junction to ambient – Wärmewiderstand Sperrschicht – Umgebung Thermal resistance junction to lead – Wärmewiderstand Sperrschicht − Anschlussdraht RthA RthL < 14 K/W 4) < 4 K/W 5) 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 See Diotec Application Note “Reliability of Bypass Diodes” – Siehe Diotec Applikationsschrift „Reliability of Bypass Diodes” 3 TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben 4 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case 5 In 3 mm distance from case (use for bypass diodes test) – In 3 mm Abstand vom Gehäuse (für Bypass-Diodentest) © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS Halogen FREE Ø 1.2±0.05 Ø 5.4±0.1 |
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