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SI8411DB-T1 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI8411DB-T1 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si8411DB Vishay Siliconix New Product www.vishay.com 2 Document Number: 72444 S-32349—Rev. A, 17-Nov-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −0.6 −1.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V, TJ = 70_C −5 mA On-State Drain Currenta ID(on) VDS v −5 V, VGS = −4.5 V −5 A Drain Source On State Resistancea rDS( ) VGS = −4.5 V, ID = −1 A 0.045 0.054 W Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −1 A 0.065 0.075 W Forward Transconductancea gfs VDS = −10 V, ID = −1 A 7 S Diode Forward Voltagea VSD IS = −1 A, VGS = 0 V −0.8 −1.1 V Dynamicb Total Gate Charge Qg 14 21 Gate-Source Charge Qgs VDS = −10 V, VGS = −4.5 V, ID = −1 A 1.7 nC Gate-Drain Charge Qgd 5.1 Gate Resistance Rg 18 W Turn-On Delay Time td(on) 31 50 Rise Time tr VDD = −10 V, RL = 10 W 50 75 Turn-Off Delay Time td(off) VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, RG = 6 W 105 160 ns Fall Time tf 90 135 Source-Drain Reverse Recovery Time trr IF = −1 A, di/dt = 100 A/ms 85 130 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 0 1234 5 VGS = 5 thru 3.5 V 25_C TC = 125_C −55_C 2 V Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 1.5 V 2.5 V 3 V |
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