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SI2335DS Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI2335DS Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si2335DS Vishay Siliconix New Product Document Number: 71314 S-02303—Rev. A, 23-Oct-00 www.vishay.com 1 P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 –12 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 G S D Top View 2 3 TO-236 (SOT-23) 1 Si2335DS (E5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS –12 Gate-Source Voltage VGS $8 V _ a, b TA = 25_C –4.0 –3.2 Continuous Drain Current (TJ = 150_C)a, b TA = 70_C ID –3.3 –2.6 Pulsed Drain Current IDM –15 A Continuous Source Current (Diode Conduction)a, b IS –1.6 TA = 25_C 1.25 0.75 Maximum Power Dissipationa, b TA = 70_C PD 0.8 0.48 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 5 sec 75 100 Maximum Junction-to-Ambienta Steady State RthJA 120 166 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. |
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